drd 1360 d 14 rectifier diode ds 5991 C 1 march 2011 (ln28177 ) 1 / 6 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 1360 d 14 drd 1360 d 12 drd 1360 d 10 drd 1360 d 08 drd1360d 06 14 00 12 00 1 000 8 00 6 00 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: d rd 1360 d 14 for a 1400 v device key parameters v rrm 14 00 v i f(av) 1360 a i fsm 15200 a (see package details for further information) fig. 1 package outline
drd 136 0d 14 2 / 6 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 1600 a i f(rms) rms value - 2510 a i f continuous (direct) on - state current - 2260 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 1360 a i f(rms) rms value - 2140 a i f continuous (direct) on - state current - 1920 a surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 190 c 15.2 ka i 2 t i 2 t for fusing v r = 0 1.16 ma 2 s
- 3 - d rd 136 0d 14 3 / 6 www.dynexsemi.com thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0 35 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.0 1 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 190 c t stg storage temperature range - 40 190 c f m clamping force 8 12 kn characteristics symbol parameter test conditions min. max. units v fm forward voltage at 1500 a peak, t case = 25 c - 1. 30 v i rm peak reverse current at v drm, t case = 190 c - 50 ma q s total stored charge i f = 1 000a, di rr /dt = 10 a/s - 2000 c t case = 190 c, v r =100v v to threshold voltage at t vj = 190 c - 0. 78 v r t slope resistance at t vj = 190 c - 0.257 m ?
drd 136 0d 14 4 / 6 www.dynexsemi.com curves fig.2 maximum forward characteristics fig.3 dissipation curves fig. 4 surge (non - repetitive) forward current vs time fig. 5 maximum (limit) transient thermal impedance - junction to case 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1 2 3 instantaneous forward current, i f - (a) instantaneous forward voltage,v f - (v) t j =190 c 0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 1400 mean power dissipation - (w) mean on - state current, i t(av) - (a) 1/2 wave 3 phase 6 phase 4.0 6.0 8.0 10.0 12.0 14.0 16.0 1 10 100 surge current, itsm - (ka) number of cycles conditons: t case =190 c v r =0 pulse width = 10ms 0 0.01 0.02 0.03 0.04 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled
- 5 - d rd 136 0d 14 5 / 6 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: d note: some packages may be supplied with gate and or tags.
drd 136 0d 14 6 / 6 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirem ents are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is pr ovided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product f ailure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disc onnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product fail ure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this m ay include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product stat us if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dyne xs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power _solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
|
